2.4. Tutorials¶
Introduction¶
This page lists all tutorials for nextnano++. The following labels are used to distinguish selected tutorials.
— DEV — Tutorials under development. The input files are not present in any release yet, and it is not clear when they will be added.
— SOON — Tutorials that are finished or almost finished. Their input files are not present in any release yet. They will be added to the next release.
— NEW — Tutorials for which input files are available since the last release (most likely alpha).
— EDU — Tutorials written aiming at teaching.
— FREE — Tutorials that can be run using free distributions of nextnano++
Attention
Links to the tutorials and names of exemplary input files may change.
Basics¶
Below you can find basic tutorials introducing the most important elements of nextnano++ syntax as well as fundamental concepts hidden behind them. We are continuously working on including new tutorials here sou you can learn nextnano++ easier.
Defining Structures¶
The set of tutorials below is the most basic one aiming at teaching you how to define structures for your simulations. The most relevant elements of nextnano++ syntax is presented here.
Contacts and Boundary Conditions¶
This will be a set of tutorials teaching basics on how to define and choose boundary conditions for your simulations to represent various physical scenarios at the boundaries of your simulation. Currently, you can find here only one tutorial, for the Schottky contact, which will be later split and expanded into multiple more specific tutorials.
Electrostatics and Strain¶
Currents¶
Other¶
p-n Junctions & Solar Cells¶
Light-Emitting Diodes¶
Quantum Mechanics¶
Quantum Wells¶
- InAs / GaSb broken gap quantum well (BGQW) (type-II band alignment)
- Si/SiGe MODQW (Modulation Doped Quantum Well)
- Exciton Binding Energy in an Infinite Quantum Well
- Scattering times for electrons in unbiased and biased single and multiple quantum wells
- — DEV — Strain effects in freestanding nitride nanostructures
Quantum Wires¶
Quantum Dots¶
- Energy levels in idealistic 3D cubic and cuboidal shaped quantum dots
- Hole energy levels of an “artificial atom” - Spherical Si Quantum Dot (6-band k.p)
- Quantum Dot Molecule
- Energy levels in a pyramidal shaped InAs/GaAs quantum dot including strain and piezoelectric fields
- — NEW — Hexagonal shaped GaN quantum dot embedded in AlN (wurtzite)
- — DEV — Energy levels of an “artificial atom” - Spherical and ellipsoidal CdSe Quantum Dot
Electronic Band Structures¶
- k.p dispersion in bulk GaAs (strained / unstrained)
- k.p dispersion in bulk unstrained, compressively and tensely strained GaN (wurtzite)
- k.p dispersion in bulk unstrained ZnS, CdS, CdSe and ZnO (wurtzite)
- Energy dispersion of holes in a quantum well
- k.p dispersion of an unstrained GaN QW embedded between strained AlGaN layers
- Energy dispersion of a cylindrical shaped GaN nanowire
- — NEW — Electronic band structure of 2DHG in Silicon inversion layers under pseudomorphic strain | 1D
- Electronic band structure of 2DHG in Si inversion layers under arbitrary stress | 1D
Superlattices¶
Cascade Structures¶
Optical Spectra and Transitions¶
Single Particle¶
- Optical absorption for interband and intersubband transitions
- Optical interband transitions in a quantum well - Matrix elements and selection rules
- Optical intraband transitions in a quantum well - Intraband matrix elements and selection rules
- Optical absorption of an InGaAs quantum well | 1D
- Intersubband absorption of an infinite quantum well
- Intersubband transitions in InGaAs/AlInAs multiple quantum well systems
Excitons¶
2-Dimensional Electron Gases (2DEGs)¶
Transmission and Conductance (CBR method)¶
- Transmission (CBR)
- Landauer conductance and conductance quantization: from quantum wires to quantum point contacts
- Electron Flying Qubit
- — DEV — Efficient method for the calculation of ballistic quantum transport - The CBR method (2D example)
- Transmission through a nanowire (CBR)
- Conductance of a quantum point contact (gated two-dimensional electron gas)
Transistors¶
- HEMT structure (High Electron Mobility Transistor)
- Two-dimensional electron gas in an AlGaN/GaN FET
- MOS Capacitor & MOSFET
- Two-dimensional electron gas in a Si MOSFET
- Electron wave functions of a 2D slice of a Triple Gate MOSFET
- Single-electron transistor - laterally defined quantum dot
- — DEV — Ultrathin-body DG MOSFET with 2-nm channel
- — DEV — Ultrathin-body DG MOSFET with 5-nm channel
Magnetic Effects¶
- Fock-Darwin states of a parabolic, anisotropic (elliptical) potential in a magnetic field
- Fock-Darwin states of parabolic, isotropic potential in a magnetic field
- Landau levels of a bulk GaAs sample in a magnetic field
- Hole wave functions in a quantum wire subjected to a magnetic field
- — DEV — Vertically coupled quantum wires in a longitudinal magnetic field
Numerics¶
General¶
This set of tutorials focus on explaining numerical side of simulations with nextnano++ from the practical point of view.
Big 3D systems¶
These tutorials cover topic of practical approach to simulations of big 3D systems aiming at specified accuracy within possibly short time.
Tricks and Hacks¶
This set of tutorials focus on non-standard simulations with nextnano++, therefore, on overcoming difficulties and limitations of models and numerics often arising from the general complexity of simulations of semiconductor devices.
This group of tutorials also covers topics related to extracting additional information from the output of nextnano++ by post-processing it with nextnanopy and Python programming language.
- C-V curve calculation for general structures (Post-processing by python)
- Interband tunneling current in a highly-doped nitride heterojunction
- Optical generation in InGaAs/GaAs QW
- Photoluminescence of Quantum Well
- From GDSII to Transmission Workflow
- Wurtzite GaN/AlN/GaN on Si(111)
- Automatically running processes after simulation