Publications

The nextnano software has been used in hundreds of scientific publications.

Our publication page showcases scientific research that leverages our nextnano software, offering a repository for researchers and users to explore publications utilizing nextnano simulations.

If you have integrated nextnano software into your thesis or dissertation, we invite you to contribute to our publication page. Share your thesis with us and become part of our nextnano community!


List of customers (selection)

The following institutions used the nextnano software in their publications.

North America
USA
  • Massachusetts Institute of Technology (MIT), Cambridge, MA, USA
    e.g. Publication in Physical Review B (2012)
  • Sandia National Laboratories, Albuquerque, NM, USA
    e.g. Publication in Applied Physics Letters (2012)
  • U.S. Naval Research Laboratory, Washington, DC, USA
    e.g. Publication in Journal of Crystal Growth (2014)
  • NASA's Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
    e.g. Publication in Proc. SPIE 9154, High Energy, Optical, and Infrared Detectors for Astronomy VI (2014)
  • Purdue University, West Lafayette, IN, USA
    e.g. Publication in Solid State Communications (2014)
  • University at Buffalo - The State University of New York, Buffalo, NY, USA
    e.g. Publication in Nano Letters (2011)
  • [NEGF] University of Wisconsin-Madison - Madison, WI, USA
    e.g. Publication in Nanophotonics (2024)
Canada
  • [NEGF] University of Waterloo - Waterloo, ON, Canada
    e.g. Publication in Photonics (2022)
Europe
Switzerland
  • IBM Research, Zurich, Switzerland
    e.g. Publication in Journal of Physics D: Applied Physics (2014)
  • ETH Zurich, Zurich, Switzerland
    e.g. Publication in New Journal of Physics (2010)
  • EPFL, Lausanne, Switzerland
    e.g. Publication in Journal of Materials Chemistry (2009)
  • Paul Scherrer Institute, Villigen, Switzerland
    e.g. Publication in Nature Photonics (2013)
France
  • Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Grenoble, France
    e.g. Publication in Nano Letters (2012)
  • Institut Néel (CNRS/Université Joseph Fourier), Grenoble, France
    e.g. Publication in Journal of Applied Physics (2014)
  • Université de Rouen, Rouen, France
    e.g. Publication in Nanotechnology (2013)
The Netherlands
  • Delft University of Technology, Delft, The Netherlands
    e.g. Publication in Journal of Nanophotonics (2010)
Germany
  • Walter Schottky Institut (WSI), Technische Universität München (TUM), Garching, Germany
    e.g. Publication in Nature Communications (2012)
  • Julius-Maximilians-Universität Würzburg, Würzburg, Germany
    e.g. Publication in Applied Physics Letters (2017)
  • Universität Bremen, Bremen, Germany
    e.g. Publication in Physical Review Letters (2019)
  • Universität Leipzig, Leipzig, Germany
    e.g. Publication in Physical Review B (2006)
  • Universität Paderborn, Paderborn, Germany
    e.g. Publication in Physical Review B (2015)
Poland
  • Polish Academy of Sciences, Warsaw, Poland
    e.g. Publication in Journal of Applied Physics (2009)
United Kingdom
  • University of Oxford, Oxford, UK
    e.g. Publication in Physical Review B (2008)
  • University of Glasgow, Glasgow, UK
    e.g. Publication in Optics Express (2014)
  • University of Surrey, Guildford, UK
    e.g. Publication in Journal of Physics D: Applied Physics (2014)
  • University of Warwick, Coventry, UK
    e.g. Publication in Physica Status Solidi (2013)
  • [NEGF] Tokyo University of Technology and Toshiba Corporation, Yokohama, Japan
    e.g. Publication in Journal of Computer Chemistry (2022)
    • China
    • East China Normal University, Shanghai, China
      e.g. Publication in Applied Physics Letters (2010)
    • National Chung Hsing University, Taichung, Taiwan
      e.g. Publication in Journal of Vacuum Science & Technology B (2011)
    Israel
    • Soreq Nuclear Research Center, Yavne, Israel
      e.g. Publication in Europhysics Letters (2009)
    • Technion Israel Institute of Technology, Haifa, Israel
      e.g. Publication in Journal of Applied Physics (2008)
    • [NEGF] Bar-Ilan University, Ramat Gan, Israel
      e.g. Publication in Photonics (2021)
    Saudi Arabia
    • KAUST, Thuwal, Saudi Arabia
      e.g. Publication in IEEE Photonics Journal (2014)

    Australia
    • The University of Western Australia, Crawley, Australia
      e.g. Publication in IEEE Transactions on Electron Devices (2013)
    • Australian National University, Canberra, Australia
      e.g. Publication in Nanoscale (2017)

    Articles that are based on nextnano simulations

    2009-2019

    There are too many to be listed here.

    2008
    • InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices
      C. Buizert, F.H.L. Koppens, M. Pioro-Ladrière, H.-P. Tranitz, I.T. Vink, S. Tarucha, W. Wegscheider, L.M.K. Vandersypen
      Physical Review Letters 101, 226603 (2008)
    • Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes
      F. Rossi, G. Salviati, M. Pavesi, M. Manfredi, M. Meneghini, E. Zanoni, U. Zehnder
      Journal of Applied Physics 103, 093504 (2008)
    • Coexistence of direct and indirect band structures in arrays of InAs/AlAs quantum dots
      T.S. Shamirzaev, A.V. Nenashev, K.S. Zhuravlev
      Applied Physics Letters 92, 213101 (2008)
    • Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector
      L.G. Jiang, L.H. Kai, L. Cheng, C.S. Yan, Y.J. Zhong
      Semiconductor Science and Technology 23, 035011 (2008)
    • Effect of uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si(111)
      O. Moshe, D.H. Rich, B. Damilano, J. Massies
      Physical Review B 77, 155322 (2008)
    • Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
      Z.Y. Zhao, W.M. Zhang, C. Yi, A.D. Stiff-Roberts, B.J. Rodriguez, A.P. Baddorf
      Applied Physics Letters 92, 092101 (2008)
    2007
    • Dimensionally constrained D’yakonov–Perel’ spin relaxation in n-InGaAs channels: transition from 2D to 1D
      A.W. Holleitner, V. Sih, R.C. Myers, A.C. Gossard, D.D. Awschalom
      New Journal of Physics 9, 342 (2007)
    • Micropatterned electrostatic traps for indirect excitons in coupled GaAs quantum wells
      A. Gärtner, L. Prechtel, D. Schuh, A.W. Holleitner, J.P. Kotthaus
      Physical Review B 76, 085304 (2007)
    • Mobility enhancement in strained p-InGaSb quantum wells
      B.R. Bennett, M.G. Ancona, J. Brad Boos, B.V. Shanabrook
      Appl. Phys. Lett. 91, 042104 (2007)
    • Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)
      G. Sarusi, O. Moshe, S. Khatsevich, D.H. Rich, B. Damilano
      Phys. Rev. B 75, 075306 (2007)
    • Charge distribution and vertical electron transport through GaN/AlN/GaN single-barrier structures
      S. Leconte, F. Guillot, E. Sarigiannidou, E. Monroy
      Semiconductor Science and Technology 22, 107 (2007)
    • Investigating valley degeneracy in AlAs two dimensional systems and split-gate structures
      C. Knaak
      Diploma thesis, TU Munich (2007)
    • Hole Mobility and Thermal Velocity Enhancement for Uniaxial Stress in Si up to 4 GPa
      X.-F. Fan, L.F. Register, B. Winstead, M.C. Foisy, W. Chen, X. Zheng, B. Ghosh, S.K. Banerjee
      IEEE Transactions on Electron Devices 54 (2), 291 (2007)
    2006
    • Single-electron switching in AlxGa1–xAs/GaAs Hall devices
      J. Müller, Y. Li, S. von Molnár, Y. Ohno, H. Ohno
      Physical Review B 74, 125310 (2006)
    • Spin injection with three terminal device based on (Ga,Mn)As/n+-GaAs tunnel junction
      T. Kita, M. Kohda, Y. Ohno, F. Matsukura, H. Ohno
      physica status solidi (c) 3 (12), 4164 (2006)
    • Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 2 GPa
      X.-F. Fan, L.F. Register, B. Winstead, M.C. Foisy, W. Chen, X. Zheng, B. Ghosh, S.K. Banerjee
      Freescale Semiconductor, Technology Publications, EINTELL5458 (2006)
    • Vertical electron transport study in GaN/AlN/GaN heterostructures
      S. Leconte, E. Monroy, J.-M. Gérard
      Superlattices and Microstructures 40, 507 (2006)
    • Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy
      P. Hazdra, J. Voves, E. Hulicius, J. Pangrác, Z. Šourek
      Applied Surface Science 253 (1), 85 (2006)
    • Mid-infrared hole-intersubband electroluminescence in carbon-doped GaAs/AlGaAs quantum cascade structures
      O. Malis, L.N. Pfeiffer, K.W. West, A.M. Sergent, C. Gmachl
      Applied Physics Letters 88, 081117 (2006)
    • Coulomb corrections to the slowdown factor in quantum-dot quantum coherence
      S. Michael, W.W. Chow, H.C. Schneider
      Applied Physics Letters 89, 181114 (2006)
    • Thermally assisted tunneling processes in InxGa1–xAs/GaAs quantum-dot structures
      M. Gonschorek, H. Schmidt, J. Bauer, G. Benndorf, G. Wagner, G.E. Cirlin, M. Grundmann
      Physical Review B 74, 115312 (2006)
    • Single-electron switching in AlxGa1–xAs/GaAs Hall devices
      J. Müller, Y. Li, S. von Molnár, Y. Ohno, H. Ohno
      Physical Review B 74, 125310 (2006)
    • Two sub-band conductivity of Si quantum well
      M. Prunnila, J. Ahopelto
      Physica E 32, 281 (2006)
    • Analysis of the optical gain characteristics of semiconductor quantum-dash materials including the band structure modifications due to the wetting layer
      M. Gioannini
      IEEE Journal of Quantum Electronics 42 (3), 331 (2006)
    • Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser
      L. Guijiang, L. Hongkai, L. Cheng, C. Songyan, Y. Jinzhong
      Chinese Journal of Semiconductors 27 (5), 916 (2006)
    • A. Wójcik-Jedlinska, K. Gradkowski, K. Kosiel, M. Bugajski
      The role of photoluminescence excitation spectroscopy in investigation of quantum cascade lasers properties
      Electron Technology – Internet Journal 37/38 (10), 1 (2005/2006)
    2005
    • Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT
      M.A. Mastro, C.R. Eddy, Jr., N.D. Bassim, M.E. Twigg, A. Edwards, R.L. Henry, R.H. Holm
      Solid-State Electronics 49 (2), 251 (2005)
    • Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction
      J. Novák, V. Holý, J. Stangl, T. Fromherz, Z. Zhong, G. Chen, G. Bauer, B. Struth
      Journal of Applied Physics 98, 073517 (2005)
    • Electric-field stabilization in a high-density surface superlattice
      T. Feil, H.-P. Tranitz, M. Reinwald, W. Wegscheider
      Applied Physics Letters 87, 212112 (2005)
    • Effect of well-width on the electro-optical properties of a quantum well
      A. Joshua, V. Venkataraman
      Semiconductor Science Technology 20, 490 (2005)
    • Simulation of the Quantum-Confined Stark Effect in a Single InGaN Quantum Dot
      K.H. Lee, J.W. Robinson, J.H. Rice, J.H. Na, R.A. Taylor, R.A. Oliver, M.J. Kappers, C.J. Humphreys
      Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 5 (2005)
    • Hochortsaufgelöste optische Spektroskopie an niedrigdimensionalen Halbleiterstrukturen
      R. Schuster
      PhD thesis, University of Regensburg (2005)
    2004
    • Materials growth for InAs high electron mobility transistors and circuits
      B.R. Bennett, B.P. Tinkham, J.B. Boos, M.D. Lange, R. Tsai
      J. Vac. Sci. Technol. B 22 (2), 688 (2004)
    • Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes
      M. Hermann, E. Monroy, A. Helman, B. Baur, M. Albrecht, B. Daudin, O. Ambacher, M. Stutzmann, M. Eickhoff
      physica status solidi (c) 1 (8), 2210 (2004)
    • Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study
      K. Gopalakrishna Naik, K.S.R.K. Rao, T. Srinivasan, R. Muralidharan, S.K. Mehta
      Solid State Communications 132, 805 (2004)
    2003
    • Engineering of Bulk and Nanostructured GaAs with Organic Monomolecular Films
      Klaus Adlkofer
      PhD Thesis, Technische Universität München (2003)
    2002
    • Surface photovoltage studies of InxGa1-xAs and InxGa1-xAs1-yNy quantum well structures
      Gh. Dumitras, H. Riechert, H. Porteanu, F. Koch
      Physical Review B 66, 205324 (2002)

     

    List of team publication (selection)

    2010-2023 2009 2008 2007
    • Three-Dimensional Si/Ge Quantum Dot Crystals
      D. Grützmacher, T. Fromherz, C. Dais, J. Stangl, E. Müller, Y. Ekinci, H.H. Solak, H. Sigg, R.T. Lechner, E. Wintersberger, S. Birner, V. Holý, G. Bauer
      Nano Letters 7 (10), 3150 (2007)
    • Theory of semiconductor quantum-wire based single- and two-qubit gates
      T. Zibold, P. Vogl, A. Bertoni
      Physical Review B 76, 195301 (2007) &
      Virtual Journal of Nanoscale Science & Technology 16 (20) (2007) &
      Virtual Journal of Quantum Information 7 (11) (2007)
    • nextnano: General Purpose 3-D Simulations
      S. Birner, T. Zibold, T. Andlauer, T. Kubis, M. Sabathil, A. Trellakis, P. Vogl
      IEEE Transactions on Electron Devices 54 (9), 2137 (2007)
    • Self-consistent quantum transport theory: Applications and assessment of approximate models
      T. Kubis, P. Vogl
      Journal of Computational Electronics 6, 183 (2007)
    • Electronic structure and transport for nanoscale device simulation
      A. Trellakis and P. Vogl
      in "Materials for Tomorrow. Theory, Experiments and Modelling" (Springer Series in Materials Science), ed. by S. Gemming, M. Schreiber, J.B. Suck, Springer, pp. 123-146 (2007)
    2006
    • The 3D nanometer device project nextnano: Concepts, methods, results
      A. Trellakis, T. Zibold, T. Andlauer, S. Birner, R.K. Smith, R. Morschl, P. Vogl
      Journal of Computational Electronics 5 (4), 285 (2006)
    • Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs
      K.H. Lee, S. Birner, J.H. Na, R.A. Taylor, S.N. Yi, Y.S. Park, C.M. Park, T.W. Kang
      Nanotechnology 17, 5754 (2006)
    • Modeling of semiconductor nanostructures with nextnano³
      S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J.A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, P. Vogl
      Acta Physica Polonica A 110 (2), 111 (2006)
    • Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs
      K.H. Lee, J.H. Na, R.A. Taylor, S.N Yi, S. Birner, Y.S. Park, C.M. Park, T.W. Kang
      Applied Physics Letters 89, 023103 (2006)
    • Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule
      T. Nakaoka, E.C. Clark, H.J. Krenner, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, J.J. Finley
      Physical Review B 74, 121305(R) (2006)
    2005
    • Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
      H.J. Krenner, M. Sabathil, E.C. Clark, A. Kress, D. Schuh, M. Bichler, G. Abstreiter, J.J. Finley
      Physical Review Letters 94, 057402 (2005)
    • Recent advances in exciton based-quantum information processing in quantum dot nanostructures
      H.J. Krenner, S. Stufler, M. Sabathil, E.C. Clark, P. Ester, M. Bichler, G. Abstreiter, J.J. Finley, A. Zrenner
      New Journal of Physics 7, 184 (2005)
    • Aluminum arsenide cleaved-edge overgrown quantum wires
      J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, V. Pellegrini
      Applied Physics Letters 87, 052101 (2005)
    • Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for InxGa1-xAs and InxGa1-xAs1-yNy quantum wells
      M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, W. Stolz
      Physical Review B 72, 155324 (2005)
    • Modeling of Purely Strain-Induced CEO GaAs/In0.16Al0.84As Quantum Wires
      S. Birner, R. Schuster, M. Povolotskyi, P. Vogl
      Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 1 (2005)
    • Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer
      O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S.K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, H. Riechert
      Virtual Journal of Nanoscale Science Technology 12 (1) (2005) &
      Physical Review B 71, 245316 (2005)
    • Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers
      K.H. Lee, S. Birner, J.H. Na, R.A. Taylor, J.W. Robinson, J.H. Rice, Y.S. Park, C.M. Park, T.W. Kang
      Proceedings of 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 547 (2005)
    • Contact block reduction method for ballistic transport and carrier densities of open nanostructures
      D. Mamaluy, D. Vasileska, M. Sabathil, T. Zibold, P. Vogl
      Physical Review B 71, 245321 (2005)
    • Calculation of carrier transport through quantum dot molecules
      T. Zibold, M. Sabathil, D. Mamluy, P. Vogl
      AIP Conf. Proc. 722, 799 (2005)
      Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff (2004)
    • Purely strain induced GaAs/InAlAs single quantum wires exhibiting strong charge carrier confinement
      R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, D. Schuh, M. Bichler, S. Birner, P. Vogl, G. Abstreiter
      AIP Conf. Proc. 772, 898 (2005)
      Proceedings of the 27th International Conference on the Physics of Semiconductors, Flagstaff (2004)
    • Carrier-confinement effects in nanocolumnar GaN/AlxGa1-xN quantum disks grown by molecular-beam epitaxy
      J. Ristic, C. Rivera, E. Calleja, S. Fernández-Garrido, M. Povoloskyi, A. Di Carlo
      Physical Review B 72, 085330 (2005)
    • Strain effects in freestanding three-dimensional nitride nanostructures
      M. Povolotskyi, M. Auf der Maur, A. Di Carlo
      physica status solidi (c) 2 (11), 3891 (2005)
    • Theoretical study of electrolyte gate AlGaN/GaN field effect transistors
      M. Bayer, C. Uhl, P. Vogl
      Journal of Applied Physics 97 (3), 033703 (2005)
    2004
    • Quantum-confined Stark shifts of charged exciton complexes in quantum dots
      J.J. Finley, M. Sabathil, P. Vogl, G. Abstreiter, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S.L. Liew, A.G. Cullis, M. Hopkinson
      Physical Review B 70, 201308(R) (2004)
    • Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
      J.J. Finley, M. Sabathil, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S. Liew, M. Migliorato, M. Hopkinson, P. Vogl
      Physica E 21, 199 (2004)
    • Advances in the theory of electronic structure of semiconductors
      J.A. Majewski, S. Birner, A. Trellakis, M. Sabathil, P. Vogl
      physica status solidi (c) 1 (8), 2003 (2004)
    • Optical properties of low-dimensional semiconductor systems fabricated by cleaved edge overgrowth
      R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, G. Schedelbeck, S. Sedlmaier, M. Stopa, S. Birner, P. Vogl, J. Bauer, D. Schuh, M. Bichler, G. Abstreiter
      physica status solidi (c) 1 (8), 2028 (2004)
    • Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces
      M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl, D. Alderighi, M. Gurioli, A. Vinattieri, M. Colocci, S. Sanguinetti, R. Nötzel
      Semiconductor Science and Technology 19, S351 (2004)
    • Electronic and optical properties of [N11] grown nanostructures
      M. Povolotskyi, A. Di Carlo, S. Birner
      physica status solidi (c) 1 (6), 1511 (2004)
    • Tuning the Piezoelectric Fields in Quantum Dots: Microscopic Description of Dots Grown on (N11) Surfaces
      M. Povolotskyi, A. Di Carlo, P. Lugli, S. Birner, P. Vogl
      IEEE Transactions on Nanotechnology 3 (1), 124 (2004)
    • Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires
      D. Alderighi, M. Zamfirescu, A. Vinattieri, M. Gurioli, S. Sanguinetti, M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, R. Nötzel
      Applied Physics Letters 84 (5), 786 (2004)
    • Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots
      D. Bougeard, P.H. Tan, M. Sabathil, P. Vogl, G. Abstreiter, K. Brunner
      Physica E 21, 312-316 (2004)
    • Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
      J.J. Finley, M. Sabathil, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S. Liew, M. Migliorato, M. Hopkinson, P. Vogl
      Physica E 21, 199-203 (2004)
    2003
    • Microscopic description of nanostructures grown on (N11) surfaces
      M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl
      Journal of Computational Electronics 2, 275 (2003)
    • Efficient computational method for ballistic currents and application to single quantum dots
      M. Sabathil, S. Birner, D. Mamaluy, P.Vogl
      Journal of Computational Electronics 2, 269 (2003)
    • Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate
      D. Alderighi, M. Zamfirescu, M. Gurioli, A. Vinattieri, M. Colocci, S. Sanguinetti, M. Povolotskyi, A. Di Carlo, P. Lugli, R. Nötzel
      physica status solidi (c) 0 (5), 1433 (2003)
    • Theory of vertical and lateral Stark shifts of excitons in InGaAs quantum dots
      M. Sabathil, S. Hackenbuchner, S. Birner, J.A. Majewski, P. Vogl, J.J. Finley
      physica status solidi (c) 0 (4), 1181 (2003)
    • Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures
      I. Bormann, K. Brunner, S. Hackenbuchner, G. Abstreiter, S. Schmult, W. Wegscheider
      Applied Physics Letters 83 (26), 5371 (2003)
    2002
    • Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures
      I. Bormann, K. Brunner, S. Hackenbuchner, G. Zandler, G. Abstreiter, S. Schmult, W. Wegscheider
      Applied Physics Letters 80 (13), 2260 (2002)
    • Elektronische Struktur von Halbleiter-Nanobauelementen im thermodynamischen Nichtgleichgewicht (PhD Thesis)
      S. Hackenbuchner
      Selected Topics of Semiconductor Physics and Technology 48
      edited by G. Abstreiter, M.-C. Amann, M. Stutzmann, P. Vogl, Walter Schottky Institute, TU Munich (2002)
    • Towards fully quantum mechanical 3D device simulation
      M. Sabathil, S. Hackenbuchner, J.A. Majewski, G. Zandler, P. Vogl
      Journal of Computational Electronics 1, 81 (2002)
    • Nonequilibrium band structure of nano-devices
      S. Hackenbuchner, M. Sabathil, J.A. Majewski, G. Zandler, P. Vogl, E. Beham, A. Zrenner, P. Lugli
      Physica B 314, 145-149 (2002)
    2001
    • Polarization induced 2D hole gas in GaN/AlGaN heterostructures
      S. Hackenbuchner, J.A. Majewski, G. Zandler, P. Vogl
      Journal of Crystal Growth 230, 607 (2001)

    nextnano++ software

    Walter Schottky Institute, Technische Universität München, Germany


    nextnano3 software

    Walter Schottky Institute, Technische Universität München, Germany


    nextnano.NEGF software