Publications

==> nextnano related PhD theses of the Walter Schottky Institute of the Technischen Universität München

Here is a list of recent nextnano³ papers

This list is not maintained any more.

From our group and collaborators

• Efficient Method for the Calculation of Dissipative Quantum Transport in Quantum Cascade Lasers
  P. Greck, S. Birner, B. Huber, P. Vogl
  Optics Express 23, pp. 6587-6600 (2015)
• Ballistic Quantum Transport using the Contact Block Reduction (CBR) Method - An introduction
  S. Birner, C. Schindler, P. Greck, M. Sabathil, P. Vogl
  Journal of Computational Electronics (2009)
  DOI 10.1007/s10825-009-0293-z
• Theory of nonequilibrium quantum transport and energy dissipation in terahertz quantum cascade lasers
  T. Kubis, C. Yeh, P. Vogl, A. Benz, G. Fasching, C. Deutsch
  Physical Review B 79, 195323 (2009)
• Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor
  S. Birner, C. Uhl, M. Bayer, P. Vogl
  J. Phys.: Conf. Ser. 107, 012002 (2008)
• Simulation of quantum cascade lasers - optimizing laser performance (in English)
  S. Birner, T. Kubis, P. Vogl
  Photonik international 2, 60 (2008)
• Simulation zur Optimierung von Quantenkaskadenlasern (in German)
  S. Birner, T. Kubis, P. Vogl
  Photonik 1/2008, 44 (2008)
• Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration
  M. Brehm, T. Suzuki, Z. Zhong, T. Fromherz, J. Stangl, G. Hesser, S. Birner, F. Schäffler, G. Bauer
  Microelectronics Journal 39, 485 (2008)
• Three-Dimensional Si/Ge Quantum Dot Crystals
  D. Grützmacher, T. Fromherz, C. Dais, J. Stangl, E. Müller, Y. Ekinci, H.H. Solak, H. Sigg, R.T. Lechner, E. Wintersberger, S. Birner, V. Holý, G. Bauer
  Nano Letters 7 (10), 3150 (2007)
• Theory of semiconductor quantum-wire based single- and two-qubit gates
  T. Zibold, P. Vogl, A. Bertoni
  Phys. Rev. B 76, 195301 (2007) &
  Virtual Journal of Nanoscale Science & Technology 16 (20) (2007) &
  Virtual Journal of Quantum Information 7 (11) (2007)
• nextnano: General Purpose 3-D Simulations
  S. Birner, T. Zibold, T. Andlauer, T. Kubis, M. Sabathil, A. Trellakis, P. Vogl
  IEEE Transactions on Electron Devices 54 (9), 2137 (2007)
• Self-consistent quantum transport theory: Applications and assessment of approximate models
  T. Kubis, P. Vogl
  Journal of Computational Electronics 6, 183 (2007)
• Electronic structure and transport for nanoscale device simulation
  A. Trellakis and P. Vogl
  in "Materials for Tomorrow. Theory, Experiments and Modelling" (Springer Series in Materials Science), ed. by S. Gemming, M. Schreiber, J.B. Suck, Springer, pp. 123-146 (2007)
• Efficient Solution of the Schrödinger-Poisson Equations in Semiconductor Device Simulations
  A. Trellakis, T. Andlauer, P. Vogl
  LSSC 2005, Lecture Notes in Computer Science 3743, 602 (2006)
• The 3D nanometer device project nextnano: Concepts, methods, results
  A. Trellakis, T. Zibold, T. Andlauer, S. Birner, R. K. Smith, R. Morschl, P. Vogl
  Journal of Computational Electronics 5, 285 (2006)
• Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs
  K.H. Lee, S. Birner, J.H. Na, R.A. Taylor, S.N. Yi, Y.S. Park, C.M. Park, T.W. Kang
  Nanotechnology 17, 5754 (2006)
• Modeling of semiconductor nanostructures with nextnano³
  S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J.A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, P. Vogl
  Acta Physica Polonica A 110 (2), 111 (2006)
• Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs
  K.H. Lee, J.H. Na, R.A. Taylor, S.N Yi, S. Birner, Y.S. Park, C.M. Park, T.W. Kang
  Applied Physics Letters 89, 023103 (2006)
• Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule
  T. Nakaoka, E.C. Clark, H.J. Krenner, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, J.J. Finley
  Physical Review B 74, 121305(R) (2006)
• Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
  H.J. Krenner, M. Sabathil, E.C. Clark, A. Kress, D. Schuh, M. Bichler, G. Abstreiter, J.J. Finley
  Physical Review Letters 94, 057402 (2005)
• Recent advances in exciton based-quantum information processing in quantum dot nanostructures
  H.J. Krenner, S. Stufler, M. Sabathil, E.C. Clark, P. Ester, M. Bichler, G. Abstreiter, J.J. Finley, A. Zrenner
  New Journal of Physics 7, 184 (2005)
• Aluminum arsenide cleaved-edge overgrown quantum wires
  J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, V. Pellegrini
  Applied Physics Letters 87, 052101 (2005)
• Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for In_xGa_1−xAs and In_xGa_1−xAs_1−yN_y quantum wells
  M. Galluppi, L. Geelhaar, H. Riechert, M. Hetterich, A. Grau, S. Birner, W. Stolz
  Physical Review B 72, 155324 (2005)
• Modeling of Purely Strain-Induced CEO GaAs/In_0.16Al_0.84As Quantum Wires
  S. Birner, R. Schuster, M. Povolotskyi, P. Vogl
  Proceedings of the 5^th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 1 (2005)
• Simulation of the Quantum-Confined Stark Effect in a Single InGaN Quantum Dot
  K.H. Lee, J.W. Robinson, J.H. Rice, J.H. Na, R.A. Taylor, R.A. Oliver, M.J. Kappers, C.J. Humphreys
  Proceedings of the 5^th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 5 (2005)
• Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers
  K.H. Lee, S. Birner, J.H. Na, R.A. Taylor, J.W. Robinson, J.H. Rice, Y.S. Park, C.M. Park, T.W. Kang
  Proceedings of 2005 5^th IEEE Conference on Nanotechnology, Nagoya, Japan, 547 (2005)
• Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs_1-xN_x capping layer
  O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S.K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, H. Riechert
  Physical Review B 71, 245316 (2005) &
  Virtual Journal of Nanoscale Science Technology 12 (1) (2005)
• Contact block reduction method for ballistic transport and carrier densities of open nanostructures
  D. Mamaluy, D. Vasileska, M. Sabathil, T. Zibold, and P. Vogl
  Physical Review B 71, 245321 (2005)
• Calculation of carrier transport through quantum dot molecules
  T. Zibold, M. Sabathil, D. Mamluy, P. Vogl
  AIP Conf. Proc. 722, 799 (2005)
• Theoretical study of electrolyte gate AlGaN/GaN field effect transistors
  M. Bayer, C. Uhl, P. Vogl
  Journal of Applied Physics 97 (3), 033703 (2005)
• Advances in the theory of electronic structures of semiconductors
  J.A. Majewski, S. Birner, A. Trellakis, M. Sabathil, P. Vogl
  physica status solidi (c) 1 (8), 2003 (2004)
• Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces
  M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl, D. Alderighi, M. Gurioli, A. Vinattieri, M. Colocci, S. Sanguinetti, R. Nötzel
  Semiconductor Science and Technology 19, S351 (2004)
• Electronic and optical properties of [N11] grown nanostructures
  M. Povolotskyi, A. Di Carlo, S. Birner
  physica status solidi (c) 1 (6), 1511 (2004)
• Tuning the Piezoelectric Fields in Quantum Dots: Microscopic Description of Dots Grown on (N11) Surfaces
  M. Povolotskyi, A. Di Carlo, P. Lugli, S. Birner, P. Vogl
  IEEE Transactions on Nanotechnology 3 (1), 124 (2004)
• Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires
  D. Alderighi, M. Zamfirescu, A. Vinattieri, M. Gurioli, S. Sanguinetti, M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, R. Nötzel
  Applied Physics Letters 84 (5), 786 (2004)
• Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots
  D. Bougeard, P.H. Tan, M. Sabathil, P. Vogl, G. Abstreiter, K. Brunner
  Physica E 21, 312-316 (2004)
• Quantum-confined Stark shifts of charged exciton complexes in quantum dots
  J.J. Finley, M. Sabathil, P. Vogl, G. Abstreiter, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S.L. Liew, A.G. Cullis, M. Hopkinson
  Physical Review B 70, 201308(R) (2004)
• Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
  J.J. Finley, M. Sabathil, R. Oulton, A.I. Tartakovskii, D.J. Mowbray, M.S. Skolnick, S. Liew, M. Migliorato, M. Hopkinson, P. Vogl
  Physica E 21, 199-203 (2004)
• Microscopic description of nanostructures grown on (N11) surfaces
  M. Povolotskyi, J. Gleize, A. Di Carlo, P. Lugli, S. Birner, P. Vogl
  Journal of Computational Electronics 2, 275 (2003)
• Efficient computational method for ballistic currents and application to single quantum dots
  M. Sabathil, S. Birner, D. Mamaluy, and P.Vogl
  Journal of Computational Electronics 2, 269 (2003)
• Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate
  D. Alderighi, M. Zamfirescu, M. Gurioli, A. Vinattieri, M. Colocci, S. Sanguinetti, M. Povolotskyi, A. Di Carlo, P. Lugli, and R. Nötzel
  physica status solidi (c) 0 (5), 1433 (2003)
• Theory of vertical and lateral Stark shifts of excitons in InGaAs quantum dots
  M. Sabathil, S. Hackenbuchner, S. Birner, J.A. Majewski, P. Vogl, J.J. Finley
  physica status solidi (c) 0 (4), 1181 (2003)
• Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures
  I. Bormann, K. Brunner, S. Hackenbuchner, G. Abstreiter, S. Schmult, W. Wegscheider
  Applied Physics Letters 83 (26), 5371 (2003)
• Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures
  I. Bormann, K. Brunner, S. Hackenbuchner, G. Zandler, G. Abstreiter, S. Schmult, W. Wegscheider
  Applied Physics Letters 80 (13), 2260 (2002)
• Surface photovoltage studies of In_xGa_1-xAs and In_xGa_1-xAs_1-yN_y quantum well structures
  Gh. Dumitras, H. Riechert, H. Porteanu, F. Koch
  Physical Review B 66, 205324 (2002)
• nextnano³ – a state-of-the-art simulation tool for 3D quantum nanodevices
  S. Birner, S. Hackenbuchner, J.A. Majewski, D. Mamaluy, M. Sabathil, G. Zandler
  Annual Report 2001, Walter Schottky Institute, TU Munich (2002)
• Theoretical modeling of single quantum dot photodiodes
  M. Sabathil, S. Hackenbuchner, S. Birner, D. Mamaluy,  J.A. Majewski
  Annual Report 2001, Walter Schottky Institute, TU Munich (2002)
• Towards fully quantum mechanical 3D device simulation
  M. Sabathil, S. Hackenbuchner, J.A. Majewski, G. Zandler, P. Vogl
  Journal of Computational Electronics 1, 81 (2002)
• Nonequilibrium band structure of nano-devices
  S. Hackenbuchner, M. Sabathil, J.A. Majewski, G. Zandler, P. Vogl, E. Beham, A. Zrenner, P. Lugli
  Physica B 314, 145-149 (2002)
• Polarization induced 2D hole gas in GaN/AlGaN heterostructures
  S. Hackenbuchner, J.A. Majewski, G. Zandler, and P. Vogl
  J. Crystal Growth 230, 607 (2001)

From elsewhere:

• Effect of well-width on the electro-optical properties of a quantum well
  A. Joshua and V. Venkataraman
  Semiconductor Science Technology 20, 490 (2005)
• Materials growth for InAs high electron mobility transistors and circuits
  B.R. Bennett, B.P. Tinkham, J.B. Boos, M.D. Lange, R. Tsai
  J. Vac. Sci. Technol. B 22 (2), 688 (2004)
• Engineering of Bulk and Nanostructured GaAs with Organic Monomolecular Films
  Klaus Adlkofer
  PhD Thesis, TU Muich (2003)

Here is a list of recent nextnano³ posters

• Theoretical study of pH response of electrolyte gate AlGaN/GaN field effect transistors
  C. Uhl, M. Bayer, P. Vogl
  334^th Heraeus Workshop on Biofunctional Interfaces, Tutzing, Germany (2004)
• Effects of Stress and Confinement of a GaAsN Capping Layer on the Emission Wavelength of InAs/GaAs Quantum Dots
  O. Schumann, S. Birner, L. Geelhaar, M. Povolotskyi, M. Sabathil, S. Hackenbuchner, P. Vogl, H. Riechert
  Quantum Dots Conference 2004, Banff, Alberta, Canada (2004)
• nextnano³ - A powerful tool for the simulation of 3D nanometer semiconductor structures
  T. Andlauer, M. Bayer, S. Birner, T. Kubis, J. A. Majewski, M. Sabathil, A. Trellakis, C. Uhl, P. Vogl, T. Zibold
  SFB 348 (Nanometer Semiconductor Devices) Final Meeting at Schloss Ringberg (2004)
• High confinement energies of strained GaAs/InAlAs single quantum wire structures
  R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, D. Schuh, M. Bichler, S. Birner, P. Vogl, G. Abstreiter
  13^th International Winterschool on New Developments in Solid State Physics "Low-dimensional Systems", Mauterndorf (2004)
• Theory of vertical and lateral Stark shifts of excitons in InGaAs quantum dots
  M. Sabathil, S. Hackenbuchner, S. Birner, J.A. Majewski, P. Vogl, J.J. Finley
  Quantum Dots Conference 2002, Tokyo, Japan (2002)
• Piezoelectric effects in InGaAs/GaAs(N11) quantum dots
  M. Gurioli, S. Sanguinetti, P. Altieri, E. Grilli, M. Guzzi, A. Vinattieri, D. Alderighi, P. Guicciardi, V. Emiliani, A. Di Carlo, M. Povolotskyi, A. Passaseo, R. Rinaldi,  E. Piscopello, S. De Rinaldis, I. Tarantini, S. Birner, S. Hackenbuchner, P. Vogl
  Poster for PA-PIE, Italy
• Nonequilibrium band structure of nano-devices
  S. Hackenbuchner, M. Sabathil, J.A. Majewski, G. Zandler, P. Vogl, E. Beham, A. Zrenner, P. Lugli
  12^th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-12), Santa Fe, New Mexico, USA (2001)